? 2016 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 40v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 40 v v gsm transient ? 15 v i d25 t c = 25 ? c (chip capability) 660 a i dm t c = 25 ? c, pulse width limited by t jm 2600 a i a t c = 25 ? c 330 a e as t c = 25 ? c5j p d t c = 25 ? c 830 w t j -55 ... +175 ? c t jm 175 ? c t stg -55 ... +175 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 ? c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 50..200 / 11..45 n/lb. weight 8 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 40 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = ? 15v, v ds = 0v ?????????????????????? 200 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 150 ? c 1.5 ma r ds(on) v gs = 10v, i d = 100a, note 1 0.85 m ? trencht4 tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode MMIX1T660N04T4 ds100738(7/16) v dss = 40v i d25 = 660a r ds(on) ? ? ? ? ? 0.85m ? ? ? ? ? features ? silicon chip on direct-copper bond (dcb) substrate ? isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) ? 175c operating temperature ? high current handling capability ? fast intrinsic diode ? avalanche rated ? low r ds(on) advantages ? easy to mount ? space savings ? high power density applications ? dc-dc converters and offi-line ups ? primary-side switch ? high speed power switching applications advance technical information s s d g g d s isolated tab d s g g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1T660N04T4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 110 180 s c iss 44.0 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 6.5 nf c rss 3.5 nf r gi gate input resistance 2.5 ?? t d(on) 40 ns t r 430 ns t d(off) 386 ns t f 260 ns q g(on) 860 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 240 nc q gd 290 nc r thjc 0.18 ?? c/w r thcs 0.05 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 660 a i sm repetitive, pulse width limited by t jm 2640 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 60 ns i rm 2.1 a q rm 63 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss r g = 1 ? (external) i f = 150a, v gs = 0v -di/dt = 100a/ ? s v r = 30v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved MMIX1T660N04T4 fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6v 5v fig. 4. normalized r ds(on) vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d > 100a fig. 2. extended output characteristics @ t j = 25oc 0 200 400 600 800 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ds - volts i d - amperes v gs = 15v 10v 8v 6v 7v 9v fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 0.05 0.1 0.15 0.2 0.25 v ds - volts i d - amperes v gs = 15v 10v 7v 6v 6.5v 8v 5v fig. 5. normalized r ds(on) to i d = 100a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 100 200 300 400 500 600 700 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1T660N04T4 fig. 7. input admittance 0 100 200 300 400 500 600 700 800 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 150oc v ds = 5v 25oc - 40oc fig. 8. transconductance 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 i d - amperes g f s - siemens t j = - 40oc 150oc v ds = 5v 25oc fig. 9. forward voltage drop of intrinsic diode 0 200 400 600 800 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 700 800 900 q g - nanocoulombs v gs - volts v ds = 20v i d = 330a i g = 10ma fig. 11. capacitance 1 10 100 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10,000 0 1 10 100 v ds - volts i d - amperes 1ms 10ms 100ms r ds(on) limit t j = 175oc t c = 25oc single pulse dc 100s
? 2016 ixys corporation, all rights reserved MMIX1T660N04T4 fig. 14. resistive turn-on rise time vs. drain current 200 400 600 800 1000 1200 320 360 400 440 480 520 560 600 640 680 i d - amperes t r - nanoseconds t j = 25oc t j = 150oc r g = 1 ? , v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 200 400 600 800 1000 1200 1400 1600 1800 12345678910 r g - ohms t r - nanoseconds 0 20 40 60 80 100 120 140 160 180 t d(on) - nanoseconds t r t d(on) t j = 150oc, v gs = 10v v ds = 20v i d = 660a i d = 330a fig. 16. resistive turn-off switching times vs. junction temperature 240 260 280 300 320 340 360 380 25 50 75 100 125 150 t j - degrees centigrade t f - nanoseconds 280 320 360 400 440 480 520 560 t d(off) - nanoseconds t f t d(off) r g = 1 ? , v gs = 10v v ds = 20v i d = 660a i d = 330a i d = 330a fig. 13. resistive turn-on rise time vs. junction temperature 200 400 600 800 1000 1200 1400 25 50 75 100 125 150 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 20v i d = 660a i d = 330a fig. 17. resistive turn-off switching times vs. drain current 200 240 280 320 360 400 440 320 360 400 440 480 520 560 600 640 680 i d - amperes t f - nanoseconds 200 280 360 440 520 600 680 t d(off) - nanoseconds t f t d(off) r g = 1 ? , v gs = 10v v ds = 20v t j = 25oc t j = 150oc fig. 18. resistive turn-off switching times vs. gate resistance 0 200 400 600 800 1000 1200 1400 1600 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 t d(off) - nanoseconds t f t d(off) t j = 150oc, v gs = 10v v ds = 20v i d = 330a i d = 660a
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1T660N04T4 ixys ref: t_660n04t4 (t9-m04)5-16-16 fig. 19. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w pin: 1 = gate 5-12 = source 13-24 = drain package outline
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